IXGT2N250

Note : Your request will be directed to Littelfuse.

The IXGT2N250 from Littelfuse is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.1 V, DC Collector Current 2 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current -0.1 to 0.1 uA. More details for IXGT2N250 can be seen below.

Product Specifications

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Product Details

Part Number
IXGT2N250
Manufacturer
Littelfuse
Description
2500 V Single Switch IGBT Module

General

Types

Single Switch IGBT
No. of Transistors

Single
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

3.1 V
DC Collector Current

2 A
Junction Temperature

-55 to 150 Degree C
Gate Emitter Leakage Current

-0.1 to 0.1 uA
Collector Emitter Voltage

2500 V
Power Dissipation

32 W
Package

TO 268
Package Type

Surface Mount
Applications

Switched-Mode and Resonant-Mode Power Supplies, Uninterruptible Power Supplies (UPS), Capacitor Discharge Circuits