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IXGT32N100A3

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IXGT32N100A3 Image

The IXGT32N100A3 from Littelfuse is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.2 V, DC Collector Current 75 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current -0.1 to 0.1 uA. More details for IXGT32N100A3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXGT32N100A3
  • Manufacturer
    Littelfuse
  • Description
    1000 V Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.2 V
  • DC Collector Current
    75 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.1 to 0.1 uA
  • Collector Emitter Voltage
    1000 V
  • Power Dissipation
    300 W
  • Package
    TO 268S
  • Package Type
    Surface Mount
  • Applications
    Pulser circuits, Capacitor discharge

Technical Documents
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