IXSH30N60B2D1

Note : Your request will be directed to Littelfuse.

The IXSH30N60B2D1 from Littelfuse is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.5 V, DC Collector Current 48 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current -0.1 to 0.1 uA. More details for IXSH30N60B2D1 can be seen below.

Product Specifications

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Product Details

Part Number
IXSH30N60B2D1
Manufacturer
Littelfuse
Description
600 V, Single Switch IGBT Module

General

Types

Single Switch IGBT
No. of Transistors

Single
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

2.5 V
DC Collector Current

48 A
Junction Temperature

-55 to 150 Degree C
Gate Emitter Leakage Current

-0.1 to 0.1 uA
Collector Emitter Voltage

600 V
Power Dissipation

250 W
Package

TO 247
Package Type

Through Hole
Applications

AC motor speed control, Uninterruptible power supplies (UPS), Welding