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IXYP10N65C3D1M

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IXYP10N65C3D1M Image

The IXYP10N65C3D1M from Littelfuse is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.6 V, DC Collector Current 7 A, Junction Temperature -55 to 175 Degree C, Gate Emitter Leakage Current -0.1 to 0.1 uA. More details for IXYP10N65C3D1M can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXYP10N65C3D1M
  • Manufacturer
    Littelfuse
  • Description
    650 V Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.6 V
  • DC Collector Current
    7 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.1 to 0.1 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    53 W
  • Package
    TO 220
  • Package Type
    Through Hole
  • Applications
    Power Inverters, UPS, Motor Drives, SMPS, PFC Circuits, Battery Chargers, Welding Machines, Lamp Ballasts

Technical Documents
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