IXYX110N120A4

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IXYX110N120A4 Image

The IXYX110N120A4 from Littelfuse is an IGBT that is ideal for power inverters, UPS, motor drives, SMPS, PFC circuits, battery chargers, welding machines, and lamp ballast applications. It has a collector-emitter breakdown voltage of over 1200 V and a saturated collector-emitter voltage of less than 1.8 V. This IGBT has a collector current of up to 375 A and a power dissipation of less than 1360 W. It ensures low conduction losses and has excellent thermal stability with a positive thermal coefficient of saturated collector-emitter voltage. This IGBT offers high power density and low gate drive requirements in an international standard package. It is available in a through-hole package that measures 41.91 x 16.13 mm.

Product Specifications

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Product Details

  • Part Number
    IXYX110N120A4
  • Manufacturer
    Littelfuse
  • Description
    1200 V IGBT for SMPS Applications

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    41.91 x 16.13 mm
  • Saturated Collector Emitter Voltage
    1.8 V
  • DC Collector Current
    375 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.2 to 0.2 µA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1360 W
  • Package
    TO 247 PLUS
  • Package Type
    Through Hole
  • Applications
    Power Inverters, UPS, Motor Drives, SMPS, PFC Circuits, Battery Chargers, Welding Machines, Lamp Ballasts

Technical Documents

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