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CM100DY-13T

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CM100DY-13T Image

The CM100DY-13T from Mitsubishi Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.3 to 1.65 V, DC Collector Current 100 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.5 uA. More details for CM100DY-13T can be seen below.

Product Specifications

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Product Details

  • Part Number
    CM100DY-13T
  • Manufacturer
    Mitsubishi Electric
  • Description
    650 V Half Bridge IGBT Module

General

  • Types
    Half Bridge IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.3 to 1.65 V
  • DC Collector Current
    100 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.5 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    775 W
  • Package Type
    Module
  • Applications
    AC Moter control, Motion servo control, Power supply
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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