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CM150MXUDP-13T1

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CM150MXUDP-13T1 Image

The CM150MXUDP-13T1 from Mitsubishi Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.5 to 2.2 V, DC Collector Current 150 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.5 uA. More details for CM150MXUDP-13T1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    CM150MXUDP-13T1
  • Manufacturer
    Mitsubishi Electric
  • Description
    650 V Chopper IGBT Module

General

  • Types
    Chopper IGBT
  • No. of Transistors
    Seven
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.5 to 2.2 V
  • DC Collector Current
    150 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.5 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    425 W
  • Package Type
    Module
  • Applications
    AC Moter control, Motion servo control, Power supply
  • RoHS Compliant
    Yes

Technical Documents
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