The CM35MXUA-24T1 from Mitsubishi Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.85 to 2.4 V, DC Collector Current 35 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.5 uA. More details for CM35MXUA-24T1 can be seen below.