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AFGB40T65RQDN

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AFGB40T65RQDN Image

The AFGB40T65RQDN from onsemi is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.55 V, DC Collector Current 40 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current -04 to 04 uA. More details for AFGB40T65RQDN can be seen below.

Product Specifications

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Product Details

  • Part Number
    AFGB40T65RQDN
  • Manufacturer
    onsemi
  • Description
    650 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.55 V
  • DC Collector Current
    40 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    -04 to 04 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    339.37 W
  • Package
    D2PAK-3 / TO-263-2
  • Package Type
    Surface Mount
  • Applications
    E-compressor for HEV/EV, PTC Heater for HEV/EV
  • Qualification
    AEC Q101
  • RoHS Compliant
    Yes

Technical Documents
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