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AFGHL30T65RQDN

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AFGHL30T65RQDN Image

The AFGHL30T65RQDN from onsemi is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.57 to 1.88 V, DC Collector Current 30 to 42 A, Peak Collector Current 120 A, DC Forward Current 30 to 42 A. More details for AFGHL30T65RQDN can be seen below.

Product Specifications

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Product Details

  • Part Number
    AFGHL30T65RQDN
  • Manufacturer
    onsemi
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.57 to 1.88 V
  • DC Collector Current
    30 to 42 A
  • Peak Collector Current
    120 A
  • DC Forward Current
    30 to 42 A
  • Gate Emitter Leakage Current
    30 uA
  • Operating Temperature
    -55 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    115.4 to 230.8 W
  • Package
    TO-247-3L
  • Package Type
    Through Hole
  • Applications
    E-compressor for HEV/EV, PTC heater for HEV/EV
  • RoHS Compliant
    Yes

Technical Documents
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