1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. onsemi
  6. AFGHL40T65RQDN

AFGHL40T65RQDN

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

AFGHL40T65RQDN Image

The AFGHL40T65RQDN from onsemi is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.6 to 1.96 V, DC Collector Current 40 to 46 A, Peak Collector Current 160 A, DC Forward Current 40 to 46 A. More details for AFGHL40T65RQDN can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    AFGHL40T65RQDN
  • Manufacturer
    onsemi
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.6 to 1.96 V
  • DC Collector Current
    40 to 46 A
  • Peak Collector Current
    160 A
  • DC Forward Current
    40 to 46 A
  • Gate Emitter Leakage Current
    30 uA
  • Operating Temperature
    -55 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    144 to 288 W
  • Package
    TO-247-3L
  • Package Type
    Through Hole
  • Applications
    E-compressor for HEV/EV, PTC heater for HEV/EV
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products