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AFGHL50T65SQD

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AFGHL50T65SQD Image

The AFGHL50T65SQD from onsemi is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.6 to 2.1 V, DC Collector Current 50 to 80 A, Peak Collector Current 200 A, DC Forward Current 30 to 80 A. More details for AFGHL50T65SQD can be seen below.

Product Specifications

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Product Details

  • Part Number
    AFGHL50T65SQD
  • Manufacturer
    onsemi
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.6 to 2.1 V
  • DC Collector Current
    50 to 80 A
  • Peak Collector Current
    200 A
  • DC Forward Current
    30 to 80 A
  • Gate Emitter Leakage Current
    250 uA
  • Operating Temperature
    -55 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    134 to 268 W
  • Package
    TO-247-3L
  • Package Type
    Through Hole
  • Applications
    Automotive HEV-EV Onboard Chargers, Automotive HEV-EV DC-DC Converters, Totem Pole Bridgeless PFC, PTC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents
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