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AFGHL50T65SQDC

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AFGHL50T65SQDC Image

The AFGHL50T65SQDC from onsemi is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.6 to 2.1 V, DC Collector Current 50 to 100 A, Peak Collector Current 200 A, DC Forward Current 20 to 40 A. More details for AFGHL50T65SQDC can be seen below.

Product Specifications

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Product Details

  • Part Number
    AFGHL50T65SQDC
  • Manufacturer
    onsemi
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    1.6 to 2.1 V
  • DC Collector Current
    50 to 100 A
  • Peak Collector Current
    200 A
  • DC Forward Current
    20 to 40 A
  • Gate Emitter Leakage Current
    250 uA
  • Operating Temperature
    -55 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    119 to 238 W
  • Package
    TO-247-3L
  • Package Type
    Through Hole
  • Applications
    Automotive, On & Off Board Chargers, DC-DC Converters, PFC, Industrial Inverter
  • Qualification
    AEC-Q101

Technical Documents
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