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FGA25N120ANTDTU

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FGA25N120ANTDTU Image

The FGA25N120ANTDTU from onsemi is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2 to 2.65 V, DC Collector Current 25 to 50 A, DC Forward Current 25 to 50 A, Junction Temperature -55 to 175 Degree C. More details for FGA25N120ANTDTU can be seen below.

Product Specifications

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Product Details

  • Part Number
    FGA25N120ANTDTU
  • Manufacturer
    onsemi
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2 to 2.65 V
  • DC Collector Current
    25 to 50 A
  • DC Forward Current
    25 to 50 A
  • Junction Temperature
    -55 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    312 W
  • Package
    TO-3P-3L
  • Package Type
    Through Hole
  • Applications
    Induction Heating, Microwave Oven
  • RoHS Compliant
    Yes

Technical Documents
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