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FGA60N65SMD

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FGA60N65SMD Image

The FGA60N65SMD from onsemi is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.9 V, DC Collector Current 60 A, DC Forward Current 30 to 60 A, Junction Temperature -55 to 175 Degree C. More details for FGA60N65SMD can be seen below.

Product Specifications

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Product Details

  • Part Number
    FGA60N65SMD
  • Manufacturer
    onsemi
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.9 V
  • DC Collector Current
    60 A
  • DC Forward Current
    30 to 60 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.4 to 0.4 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    600 W
  • Package
    TO-3P-3L
  • Package Type
    Through Hole
  • Applications
    Solar Inverter, UPS, Welder, Telecom, ESS, PFC
  • RoHS Compliant
    Yes

Technical Documents
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