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FGAF40N60SMD

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FGAF40N60SMD Image

The FGAF40N60SMD from onsemi is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.9 V, DC Collector Current 40 A, DC Forward Current 20 to 40 A, Junction Temperature -55 to 175 Degree C. More details for FGAF40N60SMD can be seen below.

Product Specifications

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Product Details

  • Part Number
    FGAF40N60SMD
  • Manufacturer
    onsemi
  • Description
    600 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.9 V
  • DC Collector Current
    40 A
  • DC Forward Current
    20 to 40 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.4 to 0.4 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    115 W
  • Package
    TO-3PF-3L
  • Package Type
    Through Hole
  • Applications
    Sewing Machine, CNC, home applliance, Moter Control
  • RoHS Compliant
    Yes

Technical Documents
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