1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. onsemi
  6. FGB20N60S_F085

FGB20N60S_F085

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

FGB20N60S_F085 Image

The FGB20N60S_F085 from onsemi is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.2 to 2.85 V, DC Collector Current 40 A, DC Forward Current 10 to 20 A, Junction Temperature -55 to 150 Degree C. More details for FGB20N60S_F085 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FGB20N60S_F085
  • Manufacturer
    onsemi
  • Description
    600 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.2 to 2.85 V
  • DC Collector Current
    40 A
  • DC Forward Current
    10 to 20 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.4 to 0.4 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    208 W
  • Package
    D2PAK-3 / TO-263-2
  • Package Type
    Through Hole
  • Applications
    Inverters, SMPS, PFC, UPS, Automotive Chargers, Converters, High Voltage Auxiliaries
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products