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FGB20N60SFD-F085

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FGB20N60SFD-F085 Image

The FGB20N60SFD-F085 from onsemi is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 2.2 to 2.85 V, DC Collector Current 20 to 40 A, Peak Collector Current 60 A, DC Forward Current 10 to 20 A. More details for FGB20N60SFD-F085 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FGB20N60SFD-F085
  • Manufacturer
    onsemi
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    20 V
  • Saturated Collector Emitter Voltage
    2.2 to 2.85 V
  • DC Collector Current
    20 to 40 A
  • Peak Collector Current
    60 A
  • DC Forward Current
    10 to 20 A
  • Gate Emitter Leakage Current
    250 uA
  • Operating Temperature
    -55 to 150 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    83 to 208 W
  • Package
    D2PAK, TO-263
  • Package Type
    Surface Mount
  • Applications
    Inverters, SMPS, PFC, UPS, Automotive Chargers, Converters, High Voltage Auxiliaries
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents
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