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FGB3040G2-F085C

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FGB3040G2-F085C Image

The FGB3040G2-F085C from onsemi is a IGBT with Gate Emitter Voltage 12 to 14 V, Saturated Collector Emitter Voltage 1.15 to 1.85 V, DC Collector Current 25.6 to 41 A, Gate Emitter Leakage Current 25 uA, Operating Temperature -55 to 175 Degree C. More details for FGB3040G2-F085C can be seen below.

Product Specifications

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Product Details

  • Part Number
    FGB3040G2-F085C
  • Manufacturer
    onsemi
  • Description
    400 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    12 to 14 V
  • Saturated Collector Emitter Voltage
    1.15 to 1.85 V
  • DC Collector Current
    25.6 to 41 A
  • Gate Emitter Leakage Current
    25 uA
  • Operating Temperature
    -55 to 175 Degree C
  • Collector Emitter Voltage
    400 V
  • Power Dissipation
    150 W
  • Package
    D2PAK
  • Package Type
    Surface Mount
  • Applications
    Automotive Ignition Coil Driver Circuits, High Current Ignition System, Coil on Plug Application
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents
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