1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. onsemi
  6. FGD3N60LSD

FGD3N60LSD

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

FGD3N60LSD Image

The FGD3N60LSD from onsemi is a IGBT with Gate Emitter Voltage -10 to 10 V, Saturated Collector Emitter Voltage 1.2 V, DC Collector Current 6 A, DC Forward Current 3 to 25 A, Junction Temperature -55 to 150 Degree C. More details for FGD3N60LSD can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FGD3N60LSD
  • Manufacturer
    onsemi
  • Description
    600 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -10 to 10 V
  • Saturated Collector Emitter Voltage
    1.2 V
  • DC Collector Current
    6 A
  • DC Forward Current
    3 to 25 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.1 to 0.1 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    40 W
  • Package
    DPAK-3 / TO-252-3
  • Package Type
    Through Hole
  • Applications
    HID Lamp Applications, Piezo Fuel Injection Applications
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products