FGH40T120SQDNL4

IGBT by onsemi (193 more products)

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The FGH40T120SQDNL4 from onsemi is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.78 V, DC Collector Current 40 A, Junction Temperature -55 to 175 Degree C, Collector Emitter Voltage 1200 V. More details for FGH40T120SQDNL4 can be seen below.

Product Specifications

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Product Details

Part Number
FGH40T120SQDNL4
Manufacturer
onsemi
Description
1200 V, Field Stop Trench IGBT Module

General

Types

Field Stop Trench IGBT
No. of Transistors

Single
Gate Emitter Voltage

-30 to 30 V
Saturated Collector Emitter Voltage

1.78 V
DC Collector Current

40 A
Junction Temperature

-55 to 175 Degree C
Collector Emitter Voltage

1200 V
Power Dissipation

227 W
Package

TO-247-4
Package Type

Through Hole
Applications

Solar Inverter, Uninterruptible Power Inverter Supplies (UPS), Welding
RoHS Compliant

Yes