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FGY75T120SQDN

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FGY75T120SQDN Image

The FGY75T120SQDN from onsemi is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.7 V, DC Collector Current 75 A, DC Forward Current 75 to 150 A, Junction Temperature -55 to 175 Degree C. More details for FGY75T120SQDN can be seen below.

Product Specifications

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Product Details

  • Part Number
    FGY75T120SQDN
  • Manufacturer
    onsemi
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.7 V
  • DC Collector Current
    75 A
  • DC Forward Current
    75 to 150 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.2 to 0.2 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    395 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Solar Inverter, UPS
  • RoHS Compliant
    Yes

Technical Documents
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