1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. onsemi
  6. NGTB25N120FL2

NGTB25N120FL2

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

NGTB25N120FL2 Image

The NGTB25N120FL2 from onsemi is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 2 V, DC Collector Current 25 A, DC Forward Current 25 to 50 A, Junction Temperature -55 to 175 Degree C. More details for NGTB25N120FL2 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NGTB25N120FL2
  • Manufacturer
    onsemi
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    2 V
  • DC Collector Current
    25 A
  • DC Forward Current
    25 to 50 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.2 to 0.2 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    385 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • Applications
    Solar Inverter, Uninterruptible Power Inverter Supplies (UPS), Welding
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products