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NGTD20T120F2

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The NGTD20T120F2 from onsemi is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2 V, DC Collector Current 20 A, Junction Temperature -55 to 175 Degree C, Collector Emitter Voltage 1200 V. More details for NGTD20T120F2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NGTD20T120F2
  • Manufacturer
    onsemi
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2 V
  • DC Collector Current
    20 A
  • Junction Temperature
    -55 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Package
    Die
  • Package Type
    Surface Mount
  • Applications
    Industrial Motor Drives, Solar Inverters, UPS Systems, Welding
  • RoHS Compliant
    Yes

Technical Documents
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