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PCGA200T65NF8

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The PCGA200T65NF8 from onsemi is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.53 V, DC Collector Current 200 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current -0.4 to 0.4 uA. More details for PCGA200T65NF8 can be seen below.

Product Specifications

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Product Details

  • Part Number
    PCGA200T65NF8
  • Manufacturer
    onsemi
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.53 V
  • DC Collector Current
    200 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.4 to 0.4 uA
  • Collector Emitter Voltage
    650 V
  • Package
    Die
  • Package Type
    Surface Mount
  • Applications
    Automotive Traction Modules, General Power Modules
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents
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