The RBN25H125S1FPQ-A0 from Renesas is a Trench IGBT that is ideal for welding, photovoltaic inverters, power converter systems, and UPS applications. It has a collector-emitter breakdown voltage of up to 1250 V, collector-emitter saturation voltage of 1.8 V, and gate-emitter voltage of less than 30 V. This IGBT has a collector current of up to 50 A and a gate-emitter leakage current of less than 1 µA. It has a power dissipation of up to 223 W. This IGBT is based on thin wafer technology and consists of a built-in fast recovery diode to provide a high-speed switching operation. It provides short-circuit withstanding capabilities to prevent over-voltage of current surges in the circuit. This IGBT is available in a through-hole package that measures 15.94 x 41.32 x 5.02 mm.