The RBN40H125S1FPQ-A0 from Renesas is a Trench Gate IGBT that is ideal for UPS, welding, photovoltaic inverters, and power converter system applications. It has a collector-to-emitter voltage of up to 1250 V, a saturated collector-to-emitter voltage of 1.8 V, and a gate emitter threshold voltage of 5.3 - 7.1 V. This IGBT has a collector current of up to 80 A, DC forward current of less than 50 A, and gate emitter leakage current of up to +1 µA. It is manufactured using thin wafer technology and consists of a built-in fast recovery diode. This Trench Gate IGBT offers high-speed switching and short-circuits protection of over 10 µs. It is available in a through-hole package that measures 15.94 x 41.32 x 5.02 mm.
