Note : Your request will be directed to Renesas.
The RJP1CS08DWT from Renesas is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.8 V, DC Collector Current 200 to 400 A, Collector Emitter Voltage 1250 V. More details for RJP1CS08DWT can be seen below.
650 V Insulated Gate Bipolar Transistor
1200 V IGBT Power Module
650 V Field-Stop Trench IGBT
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