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RJP65S07DWS

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RJP65S07DWS Image

The RJP65S07DWS from Renesas is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.5 V, DC Collector Current 300 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current -1 to 1 uA. More details for RJP65S07DWS can be seen below.

Product Specifications

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Product Details

  • Part Number
    RJP65S07DWS
  • Manufacturer
    Renesas
  • Description
    650 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.5 V
  • DC Collector Current
    300 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    -1 to 1 uA
  • Collector Emitter Voltage
    650 V
  • Package
    Die
  • Package Type
    Surface Mount
  • Applications
    Inverter
  • RoHS Compliant
    Yes

Technical Documents
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