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RJP65T54DPM-A0

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RJP65T54DPM-A0 Image

The RJP65T54DPM-A0 from Renesas is a IGBT with Gate Emitter Voltage 30 V, Saturated Collector Emitter Voltage 1.35 to 1.68 V, DC Collector Current 30 to 60 A, Peak Collector Current 225 A, Junction Temperature 175 Degree C. More details for RJP65T54DPM-A0 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RJP65T54DPM-A0
  • Manufacturer
    Renesas
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    30 V
  • Saturated Collector Emitter Voltage
    1.35 to 1.68 V
  • DC Collector Current
    30 to 60 A
  • Peak Collector Current
    225 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    1 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    63.5 W
  • Package
    TO-3PFP
  • Package Type
    Through Hole
  • Applications
    Partial switching circuit

Technical Documents
View details on the manufacturer's website
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