The MG7102WZ from ROHM Semiconductor is a Field Stop Trench IGBT that is ideal for general inverter in automotive/industrial systems and as a heater for automotive applications. It has a collector-emitter voltage of less than 650 V, a saturated collector-emitter voltage of 1.65 V, and a gate-emitter threshold voltage of 6 V. This IGBT has a DC collector current of up to 50 A and a gate-emitter leakage current of less than 200 nA. It features a trench light punch-through type design and can withstand a short-circuit current up to 8 μs. This RoHS-compliant IGBT is available as a passivated die that measures 5.92 x 4.3 mm.
