The RGS30TSX2D from ROHM Semiconductor is a Field Stop Trench IGBT that is ideal for PV inverters, power conditioners, general inverters, and UPS applications. It has a collector-emitter breakdown voltage of over 1200 V, a gate-emitter voltage of 6 V, and a saturated collector-emitter voltage of 1.7 V. This IGBT has a collector current of up to 30 A and gate-emitter leakage current of less than 500 nA. It can short-circuit voltage effects of up to 10 µs and integrates a fast and soft recovery diode. This RoHS-compliant IGBT has low conduction loss that contributes to a reduction in size and an improvement in overall efficiency. It is available in a through-hole package that measures 16 x 21 x 5.2 mm.