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RGS50TSX2DHR

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RGS50TSX2DHR Image

The RGS50TSX2DHR from ROHM Semiconductor is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.7 V, DC Collector Current 25 A, DC Forward Current 25 to 50 A, Junction Temperature -40 to 175 Degree C. More details for RGS50TSX2DHR can be seen below.

Product Specifications

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Product Details

  • Part Number
    RGS50TSX2DHR
  • Manufacturer
    ROHM Semiconductor
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.7 V
  • DC Collector Current
    25 A
  • DC Forward Current
    25 to 50 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.5 to 0.5 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    395 W
  • Package
    TO-247N
  • Package Type
    Through Hole
  • Applications
    General inverter, Automotive and indutrial use
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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