The RGS80TSX2DHR from ROHM Semiconductor is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.7 V, DC Collector Current 40 A, DC Forward Current 40 to 80 A, Junction Temperature -40 to 175 Degree C. More details for RGS80TSX2DHR can be seen below.