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RGSX5TS65DHR

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RGSX5TS65DHR Image

The RGSX5TS65DHR from ROHM Semiconductor is a IGBT with Gate Emitter Voltage 30 V, Saturated Collector Emitter Voltage 1.70 to 2.20 V, DC Collector Current 75 to 114 A, DC Forward Current 50 to 84 A, Gate Emitter Leakage Current 0.2 uA. More details for RGSX5TS65DHR can be seen below.

Product Specifications

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Product Details

  • Part Number
    RGSX5TS65DHR
  • Manufacturer
    ROHM Semiconductor
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    30 V
  • Saturated Collector Emitter Voltage
    1.70 to 2.20 V
  • DC Collector Current
    75 to 114 A
  • DC Forward Current
    50 to 84 A
  • Gate Emitter Leakage Current
    0.2 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    202 to 404 W
  • Package
    TO-247N
  • Package Type
    Through Hole
  • Applications
    General Inverter for automotive and industrial use
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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