1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. ROHM Semiconductor
  6. RGT30NS65D(TO-262)

RGT30NS65D(TO-262)

Download Datasheet Request Quote

Note : Your request will be directed to ROHM Semiconductor.

RGT30NS65D(TO-262) Image

The RGT30NS65D(TO-262) from ROHM Semiconductor is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.65 V, DC Collector Current 15 A, DC Forward Current 15 to 26 A, Junction Temperature -40 to 175 Degree C. More details for RGT30NS65D(TO-262) can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RGT30NS65D(TO-262)
  • Manufacturer
    ROHM Semiconductor
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.65 V
  • DC Collector Current
    15 A
  • DC Forward Current
    15 to 26 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.2 to 0.2 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    133 W
  • Package
    TO-262
  • Package Type
    Through Hole
  • Applications
    General Inverter, UPS, Power Conditioner, Welder
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products