The RGW00TS65DHR from ROHM Semiconductor is a IGBT with Gate Emitter Voltage 30 V, Saturated Collector Emitter Voltage 1.50 to 1.90 V, DC Collector Current 58 to 96 A, DC Forward Current 33 to 56 A, Gate Emitter Leakage Current 0.2 uA. More details for RGW00TS65DHR can be seen below.