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RGW80TS65DHR

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The RGW80TS65DHR from ROHM Semiconductor is a IGBT with Gate Emitter Voltage 30 V, Saturated Collector Emitter Voltage 1.50 to 1.90 V, DC Collector Current 48 to 80 A, DC Forward Current 25 to 41 A, Gate Emitter Leakage Current 0.2 uA. More details for RGW80TS65DHR can be seen below.

Product Specifications

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Product Details

  • Part Number
    RGW80TS65DHR
  • Manufacturer
    ROHM Semiconductor
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    30 V
  • Saturated Collector Emitter Voltage
    1.50 to 1.90 V
  • DC Collector Current
    48 to 80 A
  • DC Forward Current
    25 to 41 A
  • Gate Emitter Leakage Current
    0.2 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    107 to 214 W
  • Package
    TO-247N
  • Package Type
    Through Hole
  • Applications
    Automotive, On & Off Board Chargers, DC-DC Converters, PFC, Industrial Inverter
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents
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