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SEMiX101GD066HDs

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SEMiX101GD066HDs Image

The SEMiX101GD066HDs from Semikron Danfoss is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.45 to 2.1 V, DC Collector Current 139 A, Junction Temperature -40 to 175 Degree C, Collector Emitter Voltage 600 V. More details for SEMiX101GD066HDs can be seen below.

Product Specifications

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Product Details

  • Part Number
    SEMiX101GD066HDs
  • Manufacturer
    Semikron Danfoss
  • Description
    600 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.45 to 2.1 V
  • DC Collector Current
    139 A
  • Junction Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Package Type
    Module
  • Applications
    Matrix Converter, Resonant Inverter, Current Source Inverter

Technical Documents
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