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SEMiX202GB12E4s

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SEMiX202GB12E4s Image

The SEMiX202GB12E4s from Semikron Danfoss is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.8 to 2.4 V, DC Collector Current 312 A, Junction Temperature -40 to 175 Degree C, Collector Emitter Voltage 1200 V. More details for SEMiX202GB12E4s can be seen below.

Product Specifications

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Product Details

  • Part Number
    SEMiX202GB12E4s
  • Manufacturer
    Semikron Danfoss
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.8 to 2.4 V
  • DC Collector Current
    312 A
  • Junction Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Package Type
    Module
  • Applications
    AC inverter drives, UPS, Electronic welders

Technical Documents
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