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SEMiX303GB12E4p

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SEMiX303GB12E4p Image

The SEMiX303GB12E4p from Semikron Danfoss is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.8 to 2.4 V, DC Collector Current 469 A, Junction Temperature -40 to 175 Degree C, Collector Emitter Voltage 1200 V. More details for SEMiX303GB12E4p can be seen below.

Product Specifications

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Product Details

  • Part Number
    SEMiX303GB12E4p
  • Manufacturer
    Semikron Danfoss
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.8 to 2.4 V
  • DC Collector Current
    469 A
  • Junction Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Package Type
    Module
  • Applications
    AC inverter drives, UPS, Electronic welders

Technical Documents
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