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SEMiX603GB12E4I25p

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SEMiX603GB12E4I25p Image

The SEMiX603GB12E4I25p from Semikron Danfoss is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.8 to 2.3 V, DC Collector Current 1110 A, Junction Temperature -40 to 175 Degree C, Collector Emitter Voltage 1200 V. More details for SEMiX603GB12E4I25p can be seen below.

Product Specifications

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Product Details

  • Part Number
    SEMiX603GB12E4I25p
  • Manufacturer
    Semikron Danfoss
  • Description
    1200 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.8 to 2.3 V
  • DC Collector Current
    1110 A
  • Junction Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    1200 V
  • Package Type
    Module
  • Applications
    AC inverter drives, UPS, Electronic Welding

Technical Documents
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