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SK10DGDL07E3ETE1

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SK10DGDL07E3ETE1 Image

The SK10DGDL07E3ETE1 from Semikron Danfoss is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.45 to 2.1 V, DC Collector Current 18 A, Junction Temperature -40 to 175 Degree C, Collector Emitter Voltage 650 V. More details for SK10DGDL07E3ETE1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SK10DGDL07E3ETE1
  • Manufacturer
    Semikron Danfoss
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Seven
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.45 to 2.1 V
  • DC Collector Current
    18 A
  • Junction Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Package Type
    Module
  • Applications
    Matrix Converter, Resonant Inverter, Current Source Inverter

Technical Documents
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