1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. SemiQ
  6. GSID100A120S5C1

GSID100A120S5C1

Download Datasheet Request Quote

Note : Your request will be directed to SemiQ.

The GSID100A120S5C1 from SemiQ is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.90 to 2.30 V, DC Collector Current 100 to 170 A, Peak Collector Current 200 A, Junction Temperature 175 Degree C. More details for GSID100A120S5C1 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    GSID100A120S5C1
  • Manufacturer
    SemiQ
  • Description
    1200 V Hex Channel IGBT Module

General

  • Types
    Hex Channel IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    130 x 70.6 x 20.5 mm
  • Saturated Collector Emitter Voltage
    1.90 to 2.30 V
  • DC Collector Current
    100 to 170 A
  • Peak Collector Current
    200 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.2 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    650 W
  • Package Type
    Chassis Mount
  • Applications
    High Power Converters, Motor Drives, UPS Systems
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products