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GSID150A120S3B1

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The GSID150A120S3B1 from SemiQ is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.80 to 2.10 V, DC Collector Current 150 to 300 A, Peak Collector Current 300 A, Junction Temperature 175 Degree C. More details for GSID150A120S3B1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GSID150A120S3B1
  • Manufacturer
    SemiQ
  • Description
    1200 V Dual Switch IGBT Module

General

  • Types
    Dual Switch IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    106.4 x 61.4 x 30.8 mm
  • Saturated Collector Emitter Voltage
    1.80 to 2.10 V
  • DC Collector Current
    150 to 300 A
  • Peak Collector Current
    300 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.2 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    940 W
  • Package Type
    Chassis Mount
  • Applications
    Welding Machine/ Cutting Machine, Induction Heating, Ultrasonic Device, PV System, SMPS
  • RoHS Compliant
    Yes

Technical Documents
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