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GSID200A120S3B1

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The GSID200A120S3B1 from SemiQ is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.80 to 2 V, DC Collector Current 200 to 400 A, Peak Collector Current 400 A, Junction Temperature 175 Degree C. More details for GSID200A120S3B1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GSID200A120S3B1
  • Manufacturer
    SemiQ
  • Description
    1200 V Dual Switch IGBT Module

General

  • Types
    Dual Switch IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    106.4 x 61.4 x 30.8 mm
  • Saturated Collector Emitter Voltage
    1.80 to 2 V
  • DC Collector Current
    200 to 400 A
  • Peak Collector Current
    400 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.2 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1595 W
  • Package Type
    Chassis Mount
  • Applications
    Welding Machine/ Cutting Machine, Induction Heating, Ultrasonic Device, UPS
  • RoHS Compliant
    Yes

Technical Documents
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