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DG40Q12T2

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DG40Q12T2 Image

The DG40Q12T2 from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.9 to 2.5 V, DC Collector Current 80 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current 0.6 uA. More details for DG40Q12T2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DG40Q12T2
  • Manufacturer
    StarPower
  • Description
    1200 V Single Switch, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT, Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.9 to 2.5 V
  • DC Collector Current
    80 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.6 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    707 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • Applications
    Solar power, UPS, 3-level-application

Technical Documents
View details on the manufacturer's website
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