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DG50X07T2

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DG50X07T2 Image

The DG50X07T2 from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.45 to 1.9 V, DC Collector Current 100 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for DG50X07T2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DG50X07T2
  • Manufacturer
    StarPower
  • Description
    650 V Single Switch, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT, Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.45 to 1.9 V
  • DC Collector Current
    100 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    714 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • Applications
    Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply

Technical Documents
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