DG75X07T2

IGBT by StarPower (277 more products)

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The DG75X07T2 from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.5 to 1.95 V, DC Collector Current 150 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for DG75X07T2 can be seen below.

Product Specifications

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Product Details

Part Number
DG75X07T2
Manufacturer
StarPower
Description
650 V Field Stop Trench IGBT Module

General

Types

Field Stop Trench IGBT
No. of Transistors

Single
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

1.5 to 1.95 V
DC Collector Current

150 A
Junction Temperature

-40 to 175 Degree C
Gate Emitter Leakage Current

0.1 uA
Collector Emitter Voltage

650 V
Power Dissipation

980 W
Package Type

Module
Applications

Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply