GD1000HFL170P2S

IGBT by StarPower (277 more products)

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The GD1000HFL170P2S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.95 to 2.4 V, DC Collector Current 1800 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD1000HFL170P2S can be seen below.

Product Specifications

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Product Details

Part Number
GD1000HFL170P2S
Manufacturer
StarPower
Description
1700 V IGBT Module

General

No. of Transistors

Dual
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

1.95 to 2.4 V
DC Collector Current

1800 A
Junction Temperature

175 Degree C
Gate Emitter Leakage Current

0.4 uA
Collector Emitter Voltage

1700 V
Power Dissipation

6520 W
Package Type

Module
Applications

Auxiliary Inverters, High Power Converters, UPS, Wind and Solar Power, Traction Drives